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Volumn , Issue , 2009, Pages 201-204

A test structure for assessing individual contact resistance

Author keywords

[No Author keywords available]

Indexed keywords

ACCURATE MEASUREMENT; CMOS TECHNOLOGY; MEASUREMENT RESULTS; NANOMETER CMOS; RESISTANCE MEASUREMENT; TEST STRUCTURE;

EID: 67650104750     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMTS.2009.4814641     Document Type: Conference Paper
Times cited : (7)

References (4)
  • 2
    • 67650197106 scopus 로고    scopus 로고
    • Conct resistance mesurement of a 130-nm-diameter poly-Si plug on a lightly doped single diffusion rion in giga-bit DRAMs
    • N. Kaai, H. Kbga, and Y Takaishi. Conct resistance mesurement of a 130-nm-diameter poly-Si plug on a lightly doped single diffusion rion in giga-bit DRAMs, In IEEE itetratiorat Coiernce on Microelectroic Test Stuctues, pages 177-181, 2001.
    • (2001) IEEE itetratiorat Coiernce on Microelectroic Test Stuctues , pp. 177-181
    • Kaai, N.1    Kbga, H.2    Takaishi Y3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.