A new method to determine effective lateral doping abruptness and spreading-resistance components in nanoscale MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 4, 2008, Pages 1035-1041

  Kim, Seong Dong ^a   Narasimha, Shreesh ^a   Rim, Ken ^a  

^a IBM RESEARCH   (United States)

Author keywords

Lateral doping abruptness; MOSFETs; On resistance; Overlap capacitance; Series resistance; Spreading resistance

Indexed keywords

CAPACITANCE MEASUREMENT; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

LATERAL DOPING ABRUPTNESS; OVERLAP CAPACITANCE; SOURCE/DRAIN EXTENSION; SPREADING RESISTANCE;

MOSFET DEVICES;

EID: 41949131008     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.917548     Document Type: Article

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