Impact of transistor level degradation on product reliability

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2009, Pages 431-438

  Nigam, Tanya ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

HCI; NBTI; Product degradation; Ring oscillators

Indexed keywords

APPLIED BIAS; DEGRADATION MODEL; PRODUCT DEGRADATION; PRODUCT RELIABILITY; RING OSCILLATOR; TRANSISTOR LEVEL;

ELECTRIC CURRENTS; INTEGRATED CIRCUITS; NEGATIVE TEMPERATURE COEFFICIENT; OSCILLATORS (ELECTRONIC); THERMODYNAMIC STABILITY;

DEGRADATION;

EID: 74049110866     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2009.5280815     Document Type: Conference Paper

References (27)

1. D. Schroder and J.F. Babcock, J. Appl. Phys., 94, 1, pp. 1 (2003).
2. S. Mahapatra, M.A. Alam, P.B. Kumar, T.R. Dalei and D. Saha, "Mechanism of negative bias temperature instability in CMOS devices: Degradation, recovery and impact of nitrogen", pp. 105, International Electron Device Meeting, 2004.
3. M.A. Alam., A critical examination of the mechanics of dynamic NBTI for PMOSFETs, pp. 346-349, International Electron Device Meeting, 2003.
4. th International Reliability Physics Symposium, (2007).
5. Denais, M. Parthasarathy, C. Ribes, G. Rey-Tauriac, Y. Revil, N. Bravaix, A. Huard, V. Perrier, F. STMicroekctronics, Philips Semicond., Crolles, France, "On-the-fly characterization of NBTI in ultra-thin gate oxides in PMOSFETs", pp. 109, International Electron Device Meeting, 2004.
6. S. Rangan, N. Mielke and Everette C.C. Yeh. International Electron Device Meeting, pp. 14.3.1-4 (2003).
7. th International Reliability Physics Symposium, pp. 448-453 (2006).
8. th International Reliability Physics Symposium, pp. 735-736 (2006).
9. nd International Reliability Physics Symposium, pp. 273-282, (2004).
10. M.A. Alam, H. Kufluoglu, D. Varghese and S. Mahapatra. Microelectronics Reliability, 47, pp. 853-862, (2007).
11. rd International Reliability Physics Symposium, San Jose, pp. 381-387, (2005).
12. V. Huard, M. Denais, C. Parthasarathy. Microelectronics Reliability, 46, pp. 1-23, (2006).
13. T. Nigam, "Pulse Stress Dependence of NBTI Degradation and its Impact on Circuits", pp. 72, IEEE Transaction on Device and Material Reliability, Vol 8, 2008.
14. R. Dreesen, K. Croes, J. Manca, et al., "A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation", pp. 437, Microelectronics Reliability, 2001.
15. A. Raychaudhari, M. J. Deen, W. S. Kwan and M. I. H. King, "Features and mechanisms of the Saturating Hot-carrier Degradation in LDD NMOSFET's", pp. 1114, IEEE Transaction on Electron Devices, Vol. 43, No. 7, 1996.
16. th International Reliability Physics Symposium 2000.
17. H. Hwang, J. Goo, H. Kwon and H. Shin, "Impact of velocity saturation on nMOSFET's Hot Carrier Reliability at Elevetated Temperatures", pp. 48, IEEE, 1995.
18. H. Hwang, J. Goo, H. Kwon and H. Shin, "Anomalous Hot Carrier Degradation of nMOSFET's at elevated temperature", pp. 148, IEEE Electron Device Letters, Vol. 16, No. 4, 1995.
19. W. Wang, J. Tao, P. Fang, "Dependence of HCI mechanism on Temperature for 0.18um technoloy and beyond", pp. 66, IEEE International Relability Workshop, 1999.
20. S-Y Chen, C-H Tu, J-C Lin, M-C, Wang, P-W Kao, et al., "Investigation of DC Hot-Carrier Degradation at Elevated temperatures for p-channel Metal-Oxide-Semiconductor Field-Effect Transistore for 013um Technology", pp. 1527, Japaness Jpournal of Applied Physics, Vol. 47, No. 3, 2008.
21. th International Reliability Physics Symposium 2008.
22. M. Ershov, S. Saxena, H. Karbasi, S. Winters, S. Minehane, J. Babcock, R. Lindley, P. Clifton, M. Redford, and A. Shibkov, Applied Physics Letters, Vol. 83, No. 8, 2003.
23. G. Chen, M.F. Li, C.H. Ang, J.Z. Zheng, D.L. Kwong, IEEE Electron Device Letter, 23, pp. 734-736, (2002).
24. R. Fernandez, B. Kaczer, A. Nackaerts, S. Demuynck, R. Rodriguez, M. Nafria, G. Groeseneken. International Electron Device Meeting, pp. 337-340 (2006).
25. D. Vargese, G. Gupta, L. Madhav, D. Saha, K. Ahmed, F. Nouri, S. Mahapatra, IEEE Trans Electron Device, 2006
26. R. Mishra, S. Mitra, R. Gauthier, et al., "Concurrent HCI-NBTI: worst case degradation condition for 65 nm p-channel SOI MOSFETs", pp. 2085, Microlectronics Engineering, Vol. 84, 2007.
27. B. Marchand, G. Ghibaudo, et al., "A new Hot carrier degradation law for MOSFET lifetime prediction", pp. 1103, Microelectronics Reliability, Vo. 38, 1998.