A new hot carrier degradation law for MOSFET lifetime prediction

Microelectronics Reliability

Volumn 38, Issue 6-8, 1998, Pages 1103-1107

  Marchand, B ^a   Ghibaudo, G ^a   Balestra, F ^a   Guegan G ^b   Deleonibus, S ^b  

^a Grenoble INP Phelma   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; SATURATION (MATERIALS COMPOSITION); STRESSES;

HOT CARRIER DEGRADATION LAW;

MESFET DEVICES;

EID: 0032084015     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00137-1     Document Type: Article

References (4)

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2. V.H. Chan and J.E. Chung, IEEE Trans, on Electron Devices, vol. 42, pp. 957-962, 1995
3. S.H. Renn, J.L. Pelloie and F. Balestra, Proc. ESSDERC'97, p.696, 1997
4. A. Scarpa et al., Electronics Letters, vol. 33, p. 1342, 1997