Impact of velocity saturation region on nMOSFET's hot carrier reliability at elevated temperatures

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1995, Pages 48-50

  Hwang, Hyunsang ^a   Goo, Jung Suk ^a   Kwon, Hoyup ^a   Shin, Hyungsoon ^a  

^a LG Electronics Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; HOT CARRIERS; LEAKAGE CURRENTS; RELIABILITY; THERMAL STRESS;

SATURATION DRAIN CURRENT; VELOCITY SATURATION;

MOSFET DEVICES;

EID: 0029213226     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/irps.1995.363334     Document Type: Conference Paper

References (8)