Investigation of DC hot-carrier degradation at elevated temperatures for p-channel metal-oxide-semiconductor field-effect transistors of 0.13 μm technology

Japanese Journal of Applied Physics

Volumn 47, Issue 3 PART 1, 2008, Pages 1527-1531

  Chen, Shuang Yuan ^a   Tu, Chia Hao ^a   Lin, Jung Chun ^b   Wang, Mu Chun ^c   Kao, Po Wei ^a   Lin, Memg Hong ^a   Wu, Ssu Han ^d   Jhou, Ze Wei ^d   Chou, Sam ^d   Ko, Joe ^d   Haung, Heng Sheng ^a  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b ProMOS Technologies Inc   (Taiwan)

^c MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Analog circuit; Hot carrier (HC); NBTI; pMOSFETs; Reliability; Temperature

Indexed keywords

CIVIL AVIATION; DEGRADATION; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; ION BEAMS; NEGATIVE TEMPERATURE COEFFICIENT; RELIABILITY; SEMICONDUCTOR MATERIALS; THERMODYNAMIC STABILITY; TRANSISTORS;

APPLIED VOLTAGES; CARRIER DEGRADATIONS; DAMAGE MECHANISMS; ELEVATED TEMPERATURES; HIGH TEMPERATURES; INDUCED DEGRADATIONS; INTERFACE STATES; LIFETIME MODELS; LOW VOLTAGES; MOS-FET; NBTI; NMOSFET; PMOSFET; PMOSFETS; STRESS MODES; SUBSTRATE CURRENTS; TEMPERATURE EFFECTS; THREE TEMPERATURES;

MOSFET DEVICES;

EID: 54249136480     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1527     Document Type: Article

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