New materials of spin-on organic hardmask for sub-70 nm devices

Microelectronic Engineering

Volumn 84, Issue 12, 2007, Pages 2832-2836

  Choi, Sang Jun ^a   Oh, Chang Il ^b   Uh, Dong Seon ^b  

^a SAMSUNG Electronics   (South Korea)

^b Cheil Industries Inc   (South Korea)

Author keywords

Amorphous carbon layer (ACL); ArF lithography; Etch selectivity; Spin on organic hardmask (SOH); Tri layer resist process (TLR)

Indexed keywords

AMORPHOUS CARBON; ARGON; FLUORINE COMPOUNDS; LITHOGRAPHY; MAGNETOELECTRONICS;

AMORPHOUS CARBON LAYER (ACL) DEPOSITION; ETCH SELECTIVITY; SPIN-ON ORGANIC HARDMASK (SOH); TRI-LAYER RESIST PROCESS (TLR);

MICROELECTRONICS;

EID: 36249017840     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.02.004     Document Type: Article

References (3)

1. Meador J.D., et al. Proc. SPIE 5376 (2004) 1138-1148
2. Hah J.H., et al. Proc. SPIE 6153 (2006) 61530L
3. Shao X., et al. J. Photopolym. Sci. Tech. 14 (2001) 481-488