Effects of the O2/Ar gas flow ratio on the electrical and transmittance properties of ZnO:Al films deposited by RF magnetron sputtering

Journal of Electroceramics

Volumn 17, Issue 2-4, 2006, Pages 875-877

  Yim, Keunbin ^a   Kim, Hyounwoo ^a   Lee, Chongmu ^a  

^a Inha University   (South Korea)

Author keywords

Al doping; O2 Ar gas flow ratio; RF magnetron sputtering; Transparent conductor; ZnO:Al

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CARRIER MOBILITY; MAGNETRON SPUTTERING; SAPPHIRE; ZINC OXIDE;

AL DOPING; RF-MAGNETRON SPUTTERING; TRANSPARENT CONDUCTORS;

THIN FILMS;

EID: 33847226669     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-006-7036-3     Document Type: Conference Paper

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