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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

Optimized coalescence method for the metalorganic chemical vapor deposition (MOCVD) growth of high quality Al-polarity AlN films on sapphire

(2) Paduano, Qing a Weyburne, David a

a AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

Al polarity; AlN films; MOCVD; Optical excitons; Optimized coalescence; Sapphire substrate; X ray diffraction

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; EXCITONS; GROWTH KINETICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; SAPPHIRE; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

AL-POLARITY; ALN FILMS; OPTICAL EXCITONS; OPTIMIZED COALESCENCE; SAPPHIRE SUBSTRATES;

COALESCENCE;

EID: 17444406359 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.L150 Document Type: Article

Times cited : (25)

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