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Volumn 46, Issue 5 A, 2007, Pages 2895-2900
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Dislocation reduction mechanism in low-nucleation-density GaN growth using AlN templates
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Author keywords
AlN; Dislocation; GaN; MOCVD; UV LEDs
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Indexed keywords
CRYSTAL ORIENTATION;
DISLOCATIONS (CRYSTALS);
ENERGY EFFICIENCY;
LIGHT EMITTING DIODES;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
NUCLEATION;
THIN FILMS;
ALN;
BUFFER LAYER;
DISLOCATION DENSITY;
GALLIUM NITRIDE;
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EID: 34547866187
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.46.2895 Document Type: Article |
Times cited : (20)
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References (11)
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