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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 A, 2007, Pages 2895-2900

Dislocation reduction mechanism in low-nucleation-density GaN growth using AlN templates

(4) Morita, Daisuke a,b Fujioka, Akira a Mukai, Takashi a Fukui, Masuo b

a NICHIA CORPORATION (Japan)

b UNIVERSITY OF TOKUSHIMA (Japan)

Author keywords

AlN; Dislocation; GaN; MOCVD; UV LEDs

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ENERGY EFFICIENCY; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; THIN FILMS;

ALN; BUFFER LAYER; DISLOCATION DENSITY;

GALLIUM NITRIDE;

EID: 34547866187 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.2895 Document Type: Article

Times cited : (20)

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