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Volumn 46, Issue 5 A, 2007, Pages 2895-2900

Dislocation reduction mechanism in low-nucleation-density GaN growth using AlN templates

Author keywords

AlN; Dislocation; GaN; MOCVD; UV LEDs

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ENERGY EFFICIENCY; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; THIN FILMS;

EID: 34547866187     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2895     Document Type: Article
Times cited : (20)

References (11)
  • 7
    • 34547907332 scopus 로고    scopus 로고
    • T. Shibata, Y. Kida, H. Miyake, K. Hiramatsu, Y. Hori, K. Asai, T. Nagai, S. Sumiya, M. Tanaka, and O. Oda: Proc. 28th Int. Symp. Compound Semiconductors (IOP Publishing, Bristol, Philadelphia, 2001) Inst. Phys. Conf. Ser. No. 170, Chap. 9, p. 795.
    • T. Shibata, Y. Kida, H. Miyake, K. Hiramatsu, Y. Hori, K. Asai, T. Nagai, S. Sumiya, M. Tanaka, and O. Oda: Proc. 28th Int. Symp. Compound Semiconductors (IOP Publishing, Bristol, Philadelphia, 2001) Inst. Phys. Conf. Ser. No. 170, Chap. 9, p. 795.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.