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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1675-1677

GaN growth on silane exposed AlN seed layers

(4) Ruiz Zepeda, F a Contreras, O b Dadgar, A c Krost, A c

a CENTRO DE INVESTIGACIÓN CIENTÍFICA Y DE EDUCACIÓN SUPERIOR DE ENSENADA (Mexico)

b UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO (Mexico)

c OTTO VON GUERICKE UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ALN; ANNIHILATION PROCESS; EXPOSURE-TIME; GAN FILM; GAN GROWTH; MOCVD; OPTIMAL CONDITIONS; SEED LAYER; SILICON (111) SUBSTRATES; STEP-FLOW GROWTH; STRUCTURE QUALITY; TEM; THREADING DISLOCATION;

CHEMICAL VAPOR DEPOSITION; EPILAYERS; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON NITRIDE; SURFACE ROUGHNESS;

SURFACE MORPHOLOGY;

EID: 72549115866 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200778583 Document Type: Conference Paper

Times cited : (2)

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