Generation of misfit dislocations in highly mismatched GaN/AlN layers

Surface Science

Volumn 602, Issue 15, 2008, Pages 2643-2646

  Bai, J ^a   Wang, T ^a   Lee, K B ^a   Parbrook, P J ^a   Wang, Q ^a   Cullis, A G ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Electron microscopy; Gallium nitride; Liquid phase epitaxy; Raman scattering spectroscopy; Semiconductor semiconductor heterostructures

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LANTHANUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PAINTING; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALN BUFFER; ALN LAYERS; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; GAN FILMS; GAN GROWTH; HIGH-RESOLUTION TEM; LIQUID PHASE EPITAXY; MISFIT DISLOCATION; MISFIT DISLOCATIONS; MISFIT STRAINS; RAMAN SCATTERING SPECTROSCOPY; SEMICONDUCTOR-SEMICONDUCTOR HETEROSTRUCTURES; THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM;

EID: 49149090640     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.06.027     Document Type: Article

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