Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering

Applied Surface Science

Volumn 256, Issue 6, 2010, Pages 1812-1816

  He, Hong ^a,b   Cao, Yongge ^a,c   Fu, Renli ^b   Guo, Wang ^a   Huang, Zhi ^a   Wang, Meili ^a   Huang, Changgang ^a   Huang, Jiquan ^a   Wang, Hai ^a  

^a FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER   (China)

^b NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^c NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

InAlN; magnetron sputtering; optical properties; semiconducting III V materials

Indexed keywords

ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; ENERGY GAP; III-V SEMICONDUCTORS; LIGHT ABSORPTION; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; WIDE BAND GAP SEMICONDUCTORS;

BAND GAP ENERGY; BOWING PARAMETERS; BURSTEIN-MOSS EFFECTS; COMPOSITIONAL FLUCTUATIONS; INALN; SEMI CONDUCTING III-V MATERIALS; SPUTTERED FILMS; THEORETICAL CALCULATIONS;

INDIUM COMPOUNDS;

EID: 72549106058     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.10.012     Document Type: Article

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