The effect of AlN buffer layer on properties of AlxIn1 - xN films on glass substrates

Thin Solid Films

Volumn 517, Issue 11, 2009, Pages 3204-3207

  Yeh, Tung Sheng ^a,b   Wu, Jenn Ming ^a   Lan, Wen How ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

AlInN; AlN buffer layer; Electron concentration; Reactive sputtering

Indexed keywords

ALUMINUM; BUFFER LAYERS; ELECTRONS; GLASS; OXYGEN; REACTIVE SPUTTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALINN; ALN; ALN BUFFER LAYER; BARRIER LAYERS; CRYSTALLINITY; DEPTH PROFILES; DIRECT CURRENTS; ELECTRON CONCENTRATION; FULL WIDTH AT HALF-MAXIMUM; GLASS SUBSTRATES; HIGH-TEMPERATURE PROCESS; OXYGEN CONTAMINATIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

SUBSTRATES;

EID: 63049136507     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.101     Document Type: Article

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