Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer

Journal of Crystal Growth

Volumn 308, Issue 2, 2007, Pages 302-308

  Moram, M A ^a   Kappers, M J ^a   Joyce, T B ^b   Chalker, P R ^b   Barber, Z H ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

A3. Organometallic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; B2. Semiconducting III V materials

Indexed keywords

BUFFER LAYERS; COALESCENCE; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SCANDIUM COMPOUNDS;

DEGREE OF WETTING; INTERFACIAL AREA; ORGANOMETALLIC VAPOUR PHASE EPITAXY; SEMICONDUCTING III-V MATERIALS;

GALLIUM NITRIDE;

EID: 35348859508     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.09.009     Document Type: Article

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