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Analysis of the SiC wafers by Sterling Semiconductor indicates that they do not contain measurable amounts of metal impurities. The concentrations are lower than the resolution of their glow discharge mass spectrometry experiments (e.g., <0.005 ppm for Co and <0.01 ppm for Ni).
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Secondary ion mass spectrometry (SIMS) experiments show that no molybdenum from the sample holder clips diffuses on the sample during the annealing.
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