Wafer-level hermetic bonding using Sn/In and Cu/Ti/Au metallization

IEEE Transactions on Components and Packaging Technologies

Volumn 32, Issue 4, 2009, Pages 926-934

  Yu, Da Quan ^a   Yan, Li Ling ^a   Lee, Chengkuo ^b   Choi, Won Kyoung ^a   Thew, Serene ^a   Foo, Chin Keng ^a   Lau, John H ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Hermeticity; In Sn; Microelectromechanical systems (MEMS); Reliability; Wafer bonding; Wafer level packaging

Indexed keywords

HERMETICITY; IN-SN; MICROELECTROMECHANICAL SYSTEMS; MICROELECTROMECHANICAL SYSTEMS (MEMS); WAFER LEVEL PACKAGING;

BONDING; BUFFER LAYERS; COMPOSITE MICROMECHANICS; ELECTRONICS PACKAGING; INTERMETALLICS; MECHATRONICS; MEMS; METALLIZING; MICROELECTROMECHANICAL DEVICES; RELIABILITY; SEALS; SOLDERING ALLOYS; TIN; TITANIUM;

WAFER BONDING;

EID: 72149101517     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2009.2016108     Document Type: Article

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