Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO 2

Applied Surface Science

Volumn 254, Issue 22, 2008, Pages 7356-7360

  Agustsson, J S ^a   Arnalds, U B ^b   Ingason, A S ^c   Gylfason, K B ^d   Johnsen, K ^a   Olafsson, S ^c   Gudmundsson, J T ^c  

^a Mentis Cura   (Iceland)

^b Matvice   (Iceland)

^c UNIVERSITY OF ICELAND   (Iceland)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Coalescence; In situ resistivity; Magnetron sputtering; STM; Thin film

Indexed keywords

COALESCENCE; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; FILM GROWTH; GRAIN GROWTH; GROWTH TEMPERATURE; MAGNETRON SPUTTERING; SILICA; SURFACE ROUGHNESS; TEMPERATURE DISTRIBUTION;

CONTINUOUS FILMS; DC MAGNETRON SPUTTERING; ELECTRICAL RESISTANCES; GRAIN SIZE; SITU RESISTIVITY; TEMPERATURE DEPENDENCE; THERMALLY OXIDIZED; ULTRA-THIN;

THIN FILMS;

EID: 50549103943     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.335     Document Type: Article

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