Interface control in the laser MBE growth of hafnium oxide

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 188-191

  Lu, Y K ^a   Zhu, W ^a   Chen, X F ^a   Gopalkrishnan, R ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Gate dielectrics; Hafnium oxide; Interface control; Laser molecular beam epitaxy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PARTIAL PRESSURE; SILICON;

GATE DIELECTRICS; HAFNIUM OXIDE; INTERFACE CONTROL; LASER MOLECULAR BEAM EPITAXY;

THIN FILMS;

EID: 33644897045     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.086     Document Type: Conference Paper

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