Modelling of strained silicon-germanium material parameters for device simulation

IETE Journal of Research

Volumn 53, Issue 3, 2007, Pages 215-236

  Senapati, B ^a  

^a AMS AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; CARRIER MOBILITY; ELECTRIC FIELDS; ELECTRON AFFINITY; ENERGY GAP; GERMANIUM; HIGH ELECTRON MOBILITY TRANSISTORS; IMPACT IONIZATION; SILICON; VALENCE BANDS;

ELECTRONS AND HOLES; MINORITY CARRIER LIFETIMES; RECOMBINATION MECHANISMS; SATURATION VELOCITY; SHOCKLEY READ HALLS; SILICON GERMANIUM; STRAINED LAYERS; VALENCE BAND DISCONTINUITY;

STRAINED SILICON;

EID: 72049102368     PISSN: 03772063     EISSN: 0974780X     Source Type: Journal    
DOI: 10.1080/03772063.2007.10876137     Document Type: Article

References (102)

1. SC Jain, Germanium-Silicon Strained Layers and Heterostructures, Academic Press Inc, New York, 1994.
2. C K Maiti & G A Armstrong, Applications of SiliconGermanium Heterostructure Devices, Inst of Physics Pub, UK, 2001.
3. N Zerounian, F Aniel, R Adde & A Gruhle. SiGe heterojunction bipolar ransistor with 213 GHz/fat 77 K, Electronics Lett, vol 36, pp 1076-1078, 2000.
4. S J Koester, R Hammond, J O Chu, P M Mooney, J A Ott, L Perraud, K A Jenkins, C S Webster, I Lagnado & P R de la Houssaye, SiGe pMODFETs on Silicon-on- Sapphire Substrates with 116 GHz fmux IEEE Elec Dev Lett, vol 22, pp 92-94, 2001.'
5. B Pejcinovic, L E Kay, T W Tang & D H Navon, Numerical Simulation and Comparison of Si BJT's and Si AGetHBT's, IEEE Trans Electron Dev, vol 36, pp 2129-2137, 1989.
6. T Won & H Morkoc, High speed performance of Si/Si j _ xGc.x heterojunction bipolar transistors, IEEE Electron Dev Lett, vol 10, pp 33-35, 1989.
7. R J E Hueting, J W Slotboom, A Pruijmboom, W B de Boer, E C Timmering & N E B Cowem, On the Optimization of SiGe-Base Bipolar Transistors, IEEE Trans Electron Dev, vol 43, pp 1518-1524, 1996.
8. M Andersson, Z Xia, P Kuivalainen & H Pohjionen, Compact Si GeySi Heterojunction Bipolar Transistor Model for Device and Circuit Simulation, IEE Proc Circuits Devices Syst, vol 142, pp 1-7,1995.
9. HCD Graaff & W J Kloosterman, New Formulation of the Current and Charge Relations in Bipolar Transistor Modeling for CACD Purposes, IEEE Trans Electron Dev, vol 32, pp 4215-2419, 1985.
10. DM Richey, J D Cressler & A J Joseph, Scaling Issues and Ge Profile Optimization in Advanced UHV/CVD SiGe HBT's, IEEE Trans Electron Dev, vol 44, pp 431-440, 1997.
11. Avantl Corporation, Fremont, CA, Two-Dimensional Device Simulation Program, Tech Rep MEDICI Ver4.1, 1998.
12. Stanford University, PISCES-2ET2-D Device Simulator, 1994.
13. S Amon, B Ferk, D Vrtacnik, D Resnik, D Krizaj & S Sokolic, 2D numerical modeling of SiGe structures, in Mediterranean Electrotechnical Conf, vol 1, pp 326-329, 1998.
14. C K Maiti & G A Armstrong, Simulation of Silicon Germanium HBTs using ATLAS, Simulation Standard, pp 6-8, 1997.
15. E Kasper, Editor, Properties of Strained and Relaxed Silicon Germanium, INSPEC, The Institute of Electrical Engineers, London, 1995.
16. R People, Indirect band gap of coherently strained Gex Si, _x bulk alloys on <100> silicon substrates, Phys Rev, vol 32, pp 1405-1408, 1985.
17. B L Tron, M D R Hashim, P Ashbum, M Mouis, A Chantre & G Vincint, Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology, IEEE Trans Electron Dev, vol 44, pp 715-722, 1997.
18. P Ashbum, H Boussetta, M D R Hashim, A Chantre, M Mouis, G J Parker & G Vincent, Electrical determination bandgap narrowing in bipolar transistors with epitaxial Si, epitaxial Sii _xGex, and ion implanted bases, IEEE Trans Electron Dev, vol 43, pp 774-782, 1996.
19. Z Matutinovic-Krstelj, V Venkataraman, E J Prinz, J C Sturm & C W Magee, Base resistance and effective bandgap reduction in n-p-n Si/Si (_ ¿Ge^/Si HBTs with heavy base doping, IEEE Trans Electron Dev, vol 43, pp 457-466, 1996.
20. S C Jain, J Poortmans, S S Iyer, J J Loferski, J Nijs, R Mertens & R van Overstraeten, Electrical and optical bandgaps of GexSi, _ x strained layers, IEEE Trans Electron Dev, vol 40, pp 2338-2343,1993.
21. A Pruijmboom, J W Slotboom, D J Gravesteijn, C W Fredriksz, A A van Gorkum, R A van de Heuvel, J M L van Rooij-Mulder, G Streutker & G F A van de Walle, Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy, IEEE Electron Dev Lett, vol 12, pp 357-359, 1991.
22. C A King, J L Hoyt & J F Gibbons, Bandgap and Transport Properties of Si, _xGcx by Analysis of Nearly Ideal Si/Si,. ^Ge/Si Heterojunction Bipolar Transistor, IEEE Trans Electron Dev, vol 36, pp 2093-2104,1989.
23. E J Prinz, P M Garone, P V Schwartz, X Xiao & J C Sturm, The effect of base-emitter spacers and strain- dependent densities of states in Si/Si! _ ficxl Si heterojunction bipolar transistors, in IEEE IEDM Tech Dig, pp 639-642, 1989.
24. S S Iyer, G L Patton, J M C Stork, B S Meyerson & D L Harame, Heterojunction Bipolar Transistor Using Si-Ge Alloys, IEEE Trans Electron Dev, vol 36, pp 2043-2063, 1989.
25. G L Patton, S S Iyer, S L Delage, S Tiwari & J M C Stork, Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy, IEEE Electron Dev Lett, vol 9, pp 165-167, 1988.
26. J C Bean, Silicon-based semiconductor heterostructures: Column IV bandgap engineering, Proc IEEE, vol 80, pp 571-587, 1992.
27. C G van de Walle & R M Martin, Theoretical Study of Si/Ge Interfaces, J Vac Sci Tecluiol B, vol 3, pp 1256-1259, 1985.
28. R People & J C Bean, Band Alignments of Coherently Strained Si^Ge/Si Heterostructures on <001> GevSi, _v Substrates, Appl Phys Lett, vol 48, pp 538-540, 1986.
29. W X Ni, J Knall & G V Hansoon, New Method to Study Band Offsets Applied to Strained Si/Si! _ xGex (100) Heterojunction Interfaces, Phys Rev B, vol 36, pp 7744-7747, 1987.
30. S Takagi, J L Hoyt, K Rim, J J Welser, J F Gibbons, G van de Wall & R M Martin, Evaluation of the Valence Band Discontinuity of Si/Si/.¿Ge,/ Si Heterostructures by Application of Admittance Spectroscopy to MOS Capacitors Theoretical Study of Si/Ge Interfaces, IEEE Trans Electron Dev, vol 45, pp 494-501, 1998.
31. K Nauka, TI Kamins, J E 'Rimer, C A King, J L Hoyt & J F Gibbons, Admittance Spectroscopy Measurements of Band Offsets in Si/Si, _xGex/ Si Heterostructures, Appi Phys Lett,\ol 60, pp 195-197, 1992.
32. K Rim, S Takagi, J J Welser, J L Hoyt & F Gibbons, Capacitance-voltage characteristics of p-Si/SiGeC MOS capacitors, Mat Res Soc Symp Proc, vol 379, pp 327-332, 1995.
33. C H Gan, J A del Alamo, B R Bennett, B S Meyerson, E F Crabbe, C G Sodini & L R Reif, Si/ Si,.¿Ge, valence band discontinuity measurements using a semiconductor- insulator-semiconductor (SIS) heterostructure, IEEE Trans Electron Dev, vol 41, pp 2430-2439, 1994.
34. R People, Physics and Applications of Sit _xGex Strained- Layer Heterostructures, IEEE J Quantum Elee, vol 22, pp 1696-1710, 1986.
35. C Jungemann, S Keith & B Meinerzhagen, Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile, IEICE Trans Electron, voi E83, pp 1228-1234, 2000.
36. M M Rieger & P Vogl, Electronic-Band Parameters in Strained Si, _xGex Alloys on Si, _ vGevSubstrates, Phys Rev B, vol 48, pp 14276-14287,1993.
37. M V Fischetti & S E Laux, Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys, J Appi Phys, vol 88, pp 2234-2252, 1996.
38. M A Green, Intrinsic concentration, effective densities of states, and effective mass in Si, J Appi Phys, vol 67, pp 2944-2954, 1990.
39. O Madelung, Semiconductors Group IV Elements and III-V Compounds. Springer-Verlag, Data in Science and Technology, Germany, 1991.
40. M V Fischeti, Monte Carlo Simulation of Transport in Technologically Significant Semiconductor of the Diamond and Zinc-Blende Structures - Part I: Homogeneous Transport, IEEE Trans Electron Dev, vol 38, pp 634-649, 1991.
41. F M Bufler, P Graf, B Meinerzhagen, D Adeline, M M Rieger, H Kabbel & G Fischer, Low-and high-field electron-transport parameters for untrained and strained Si, _xGex, IEEE Electron Dev Lett,\ol 18, pp 264-266, 1997.
42. J C Hensel & G Feher, Cyclotron Resonance Experiments in Uniaxially Stress Silicon, Phys Rev, vol 129, pp 1041-1062,1963.
43. Y Fu, Q Chen & M Willander, Resonant tunneling of holes in Si/Ge^Si, _XJ Appi Phys, vol 70, pp 7468-7473, 1991.
44. S K Chun & K L Wang, Effective mass and mobility of holes in strained Si^Ge^ layers on (001) Si(_ vGev substrate, IEEE Trans Electron Dev, vol 39, pp 2153-2164, 1992.
45. T Manku & A Nathan, Effective mass for strained p-type Si, _, Get, JAppl Phys, vol 69, pp 8414-8416,1991.
46. J E Lang, F L Madarasz & P M Hemenger, Temperature dependent density of states effective mass in nonparabolic p-type silicon, J Appl Phys, vol 54, p 3612, 1983.
47. J E Sutherland & J R Hauser, A computer analysis of hcterojunction and graded composition solar cells, IEEE Trans Electron Dev, vol 24, pp 36:1-372,1977.
48. F L Madarasz, J E Lang & P M Hemeger, Effective Masses for Nonparabolic Bands in p-type Silicon, J Appl Phys, vol 52, pp 4646-4648, 1981.
49. H D Barber, Effective Mass and Intrinsic Concentration in Silicon, Solid-Sate Electron, vol 10, pp 1039-1051, 1967.
50. J W Slotboom & H C deGraff, Measurement of bandgap narrowing in Si bipolar transistor, Solid-State Electron, vol 19, pp 857-862, 1976.
51. DBM Klaassen, J M Slotboom & H C De Graaff, Unified apparent bandgap narrowing in n- and p-type silicon, Solid-State Electron, vol 35, pp 125-129, 1992.
52. J W Slotboom & II C deGraff, Bandgap Narrowing in Silicon Bipolar Transistor, IEEE Trans Electron Dev, vol 24, pp 1123-1125, 1977.
53. J A del Alamo & R M Swanson, Measurement of steady- state minority-carrier transport parameters in heavily doped n-type silicon, IEEE Trans Electron Dev, vol 34, pp 1580-1589, 1987.
54. S E Swirhun, Y II Kwark & R M Swanson, Measurement of electron lifetime, electron mobility and bandgap narrowing in heavily doped p-type Silicon, in IEEE I EDM Tech Dig, pp 24-27, 1986.
55. S C Jain & D J Roulston, A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and Ge, Si,_f strained layers, Solid-State Electron, vol 34, pp 453-465, 1991.
56. T I Kamins et al. Small geometry, high-performance, Si-Si xGe, hcterojunction bipolar transistors, IEEE Electron Dev Lett,\o\ 10, pp 503-505, 1989.
57. A Gmhle, H Kibbel, U Erben & E Kasper, MBE-Grown. Si/SiGe HBT's with High p, fj, and fmux, IEEE Electron Dev Lett, vol 13, pp 206-208, 1992.
58. A F da Silva, C Y An, J C de Souza, A S Alves, T S da Silva, N S Dantas, J S Almeida, A V B da Silva & I Pepe, Optical Characterization and Mctal-Nonmetal Transition of Boron-Doped Sii.^Ge, Alloy, Solid-State Electron, vol 43, pp 17-20, 1999.
59. B Y Tsaur, C K Chen & S A Manno, Long-Wavelength Si Heterojunction Infrared Detector and 400 X 400- Element Imager Arrays, IEEE Electron Dev Lett, vol 12, pp 293-296,1991.
60. PM Garone, V Venkataraman & J C Strum, Hole Mobility Enhancement in MOS-Gated Ge_jSij _ x/Si Heterostructure Inversion Layers, IEEE Electron Dev Lett, vol 13, pp 56-58, 1992.
61. J Poortmans, S C Jain, D H J Totterdell, M Caymax, J F Nus, R P Mertens & R V Overstraeten, Theoretical Calculation and Experimental Evidence of the Real and Apparent Bandgap Narrowing Due to Heavy Doping in p-Type Si and Strained Si^Ge^ Layers, Solid-State Electron, vol 36, pp 1763-1771,1993.
62. I M Anteney, G Lippert, P Ashbum, H J Osten, B Heinemann, G J Parker & D Knoll, Characterization of- the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBTs, IEEE Electron Dev Lett, vol 20, pp 116-118, 1998.
63. D M Caughey & R E Thomas, Carrier mobilities in silicon empirically related to doping and field, in IEEE Proc, vol 55, pp 2192-2193, 1967.
64. N D Arora, J R Hauser & D J Roulston, Electron and Hole Mobility in Silicon as a Function of Concentration and Temperature, IEEE Trans Electron Dev, vol 29, pp 292-295, 1982.
65. G Masetti, M Severi & S Solmi, Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosporus-, and Boron-Doped Silicon, IEEE Trans Electron Dev, vol 30, pp 764-769,1983.
66. J Dziewior & D Silber, Minority-carrier diffusion coefficients in highly doped silicon, Appl Phys Lett, vol 35, pp 170-172, 1979.
67. A B Sproul, M A Green & A W Stephens, Accurate determination of minority carrier- and lattice scattering- mobility in silicon from photoconductance decay, J Appl Phys, vol 72, pp 4161-4171, 1992.
68. C Jungemann, B Heinemann, K Tittelbach-Helmrich & B Meinerzhagen, An Accurate, Experimentally Verified Electron Minority Carrier Mobility Model for Si and SiGe, in IEEE IEDM Tech Dig, pp 101-104, 2000.
69. S E Swirhun, J A del Alamo & R M Swanson, Measurement of hole mobility in heavily doped n-type silicon, IEEE Electron Dev Lett, vol 7, pp 168-171,1986.
70. W R Thurber, R L Mattis & Y M Liu, Resistivity-dopant density relationship for boron-doped silicon, J Electrochem Soc: SolidState Sc and Tech, vol 127, pp 2291-2294, 1980.
71. DBM Klaassen, A Unified Mobility Model for Device Simulation-I. Model Equations and Concentration Dependence, Solid-State Electron, vol 35, pp 953-959,1992.
72. DBM Klaassen, A Unified Mobility Model for Device Simulation-II. Temperature Dependence of Carrier Mobility and Lifetime, Solid-State Electron, vol 35, pp 961-967, 1992.
73. J M Hinckley & J Singh, Hole transport theory in pseudomorphic Si, _ xGex alloys grown on Si(OOl) substrates, Phys Rev B, vol 41, pp 2912-2926, 1990.
74. S Krishnamurthy, A Sher & A B Chen, Generalized Brooks Formula, and the Electron Mobility in Si, _xGex Alloys, Appl Phys Lett, vol 47, pp 160-162, 1985.
75. T Manku & A Nathan, Electron drift mobility model for 'devices based on unstrained and coherently strained Si, _ tGef grown on <001> silicon substrate, IEEE Trans Electron Dev, vol 39, pp 2082-2089, 1992.
76. L E Key & T W Tang, Monte Carlo Calculation of Strained and Unstrained Electron Mobilities in Si, _xGex Using an Improved Ionized-impurity Model, J Appl Phys, vol 70, pp 1483-1488, 1991.
77. T Manku, J M McGregor, A Nathan, D J Roulston, J P Noel, & D C Houghton, Drift hole mobility in strained and unstrained doped Si, _ xGex alloys, IEEE Trans Electron Dev, vol 40, pp 1990-1996, 1990.
78. J S Rieh, P Bhattacharya & E T Croke, Temperature Dependent Minority Electron Mobilities in Strained Si Ge (0.2 < x < 0.4) Layers, IEEE Trans Electron Dev, vol 47, pp 883-890, 2000.
79. X Chen, K C Liu, S K Jayanarayanan & S Banerjee, Electron mobility enhancement in strained SiGe vertical n-type metal-oxide-semiconductor field-effect transistors, Appl Phys Lett, vol 78, pp 377-379,2001.
80. F M Bufler, P Graf & B Meinerzhagen, Hole transport investigation in unstrained and strained SiGe, J Vac Sc TechnolB, vol 16, pp 1667-1669, 1998.
81. F M Buffer, P Grak, S Keith & B Meinerzhagen, Full band Monte Carlo investigation of electron transport in strained Si grown on Si, _xGex substrates, Appl Phys Lett, vol 71, pp 3477-3499, 1997.
82. Q Lu, M R Sardela, Jr, T R Bramblett & J E Greene, B- Doped Fully Strained Si,_xGex Layers Grown on Si(001) by Gas-Source Molecular Beam Epitaxy from Si2H6, Ge2H6, and B2H6: Charge Transport Properties, J Appl Phys, vol 80, pp 4458-4466, 1996.
83. T K Cams, S K Chun, M O Tanner, K L Wang, T I Si, Gex Kamins, JE Turner, D Y C Lie, M A Nicolet & R G Wilson, Hole mobility measurements in heavily doped Si,.tGex strained layers, IEEE Trans Electron Dev, vol 51, pp 1273-1281, 1994.
84. K B Joelsson, Y Fu, W X Ni & G V Hansson, Hall Factor and Drift Mobility for Hole Transport in Strained Si, _xGex Alloys, J.Appl Phys, vol 81, pp 1264-1269, 1997.
85. K K Thornber, Current equation for velocity overshoot, IEEE Electron Dev Lett, vol 3, pp 69-71,1982.
86. C Canali, G Majni, R Minder & G Ottaviani, Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature, IEEE Trans Electron Dev, vol 22, pp 1045-1047, 1975.
87. W Hansch & M M Mattausch, The hot-electron problem in small semiconductor devices, J Appi Phys, vol 60, pp 650-656, 1986.
88. S C Lee, T W Tang & D H Navon, Transport model for MBTE, in 6th Int NASECODE Conf, pp 478-483,1989.
89. B Senapati, C K Maiti & N B Chakrabarti, Silicon Heterostructure Devices for RF Wireless Communication, in Int'l Conf on VLSI Design, Calcutta, pp 488-491, 2000.
90. M Ershov & V Ryzhii, High-field electron transport in SiGe alloy, J Appi Phys, vol 33, pp 1365-1371, 1994.
91. H Mau, Anpassung and Implementation des Energietransportmodells zur vergleichenden Simulation mit dem Drift-Diffusions-Modell an SiGe Heterobipolartransistoren. PhD thesis, Technische Universit, at Ilmenau, Institut für Festkorperelektronik, 1997.
92. S M Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, 2nd ed, 1981.
93. J G Fossum & D S Lee, A Physical Model for the Dependence of Carrier lifetime on Doping Density in Nondegenerate Silicon, Solid-State Electron, vol 25, pp 741-747, 1982.
94. M S Tyagi & R V Overstraeten, Minority Carrier Recombination in Heavily-Doped Silicon, Solid-State Electron, vol 26, pp 577-597, 1983.
95. A Schenk, A Model for the Field and Temperature Dependence of Shockley-Read-Hall Lifetimes in Silicon, Solid-State Electron, vol 35, pp 1585-1596, 1992.
96. T Ghani, J L Hoyt, D B Nobel, J F Gibbons, J E Turner, & T I Kamins, Effect of Oxygen on Minority carrier Lifetime and Recombination Currents in Si, _ xGex Heterostructure Devices, Appl Phys Lett, vol 58, pp 1371 - 1374, 1991.
97. P V Schwartz & J C Strum, Microsecond Carrier Lifetimes in Strained Silicon-Germanium Alloys Grown by Rapid Thermal Chemical Vapor Deposition, Appl Phys Lett, vol 57, pp 2004-2006, 1990.
98. C A King, J L Hoyt, C M Gronet, J F Gibbons, M P Scott & J Turner, Si/ Si, _ xGcx heterojunction bipolar transistors produced by limited reaction processing, IEEE Electron Dev Lett, voi EDL-10, pp 52-54,1989.
99. G S Higashi, J C Bean, C Buescher, R Yadvish & H Temkin, Improved Minority-Carrier Lifetimes in Si/SiGe Heterojunction Bipolar Transistors Grown by Molecularbeam Epitaxy, Appl Phys Lett, vol 56, pp 2560-2568, 1990.
100. S Selberherr, Analysis and Simulation of Semiconductor Devices, Springer Verlag, Vienna, 1984.
101. J Lee, A L Gutierrez-Aitkcn, S H Li & P K Bhattacharya, Responsivity and impact ionization coefficients of Sij _ tGec photodiodes, IEEE Trans Electron Dev, vol 43, pp 977-981, 1996.
102. K Yeom, J M Hinckley & J Singh, Calculation of electron and hole impact ionization coefficients in SiGe alloys, J Appl Phys, vol 80, pp 6773-6782, 1996.