Optical characterization and metal-nonmetal transition of boron-doped Si1-xGex alloy

Solid-State Electronics

Volumn 43, Issue 1, 1999, Pages 17-20

  Da Silva, A Ferreira ^a   An, C Ying ^a   De Souza, J Caetano ^b   Alves, A Santos ^b   Da Silva, T Souza ^c   Dantas, N Souza ^c   Almeida, J Souza ^c   Da Silva, A V Batista ^c   Pepe, I ^c  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

^b DEPARTAMENTO DE CIÊNCIAS BIOLÓGICAS   (Brazil)

^c FEDERAL UNIVERSITY OF BAHIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8444243270     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(98)00254-8     Document Type: Article

References (32)

1. Cody GD, Abeles B, Dismukes JP. Proc IX Int Conf on Thermoelectrics, 1990. p. 182.
2. Arienzo M, Iyer SS, Meyerson BS, Patton GL, Stork JMC. Appl Surf Sci 1991;48/49:377.
3. Karlstein M, Willander M. Solid-St Electr 1990;33:199.
4. Mamontov YV, Willander M. Solid-St Electr 1995;38:599.
5. de Sande JCG, Rodríguez A, Rodríguez T. Appl Phys Lett 1995;67:3402.
6. Radamson HH, Joelsson KB, Ni WX, Hultman L, Hansson GV. J Crystal Growth 1995;157:80.
7. SMBE 1995, Silicon molecular beam epitaxy, J Crystal Growth 1995;157:1.
8. Han SH, Cook BA. J Mater Res 1996;11:55.
9. Cook BA, Beaudry BJ, Harringa JL, Barnett WJ. Proc of 24th Intersoc Energy Conv Eng Conf 1989:693.
10. Cook BA, Beaudry BJ, Harringa JL, Barnett WJ. Proc IX Int Conf on Thermoelectrics 1990:234.
11. Caillat T, Fleurial JP, Borghchevsky A. Proc XI Int Conf on Thermoelectrics 1992:240.
12. Hasezaki K, Nishimura M, Umata M, Araoka M. Proc 12th Int Conf on Thermoelectrics, 1993:307.
13. Benjamin JS. Sci Amer 1976;234:40.
14. Koch CC, Cavin OB, McKamey CG, Scarbrough JO. Appl Phys Lett 1983;43:1017.
15. Schwarz RB, Koch CC. Appl Phys Lett 1986;49:1017.
16. Benn RC, Mirchandani PK, Watwe AS. APMI Proc Modern Develop in Power Metallurgy, 1988:18.
17. Ferreira da Silva A, Souza Dantas N, de Brito Mota F, Canuto S, Fazzio A. Solid State Commun 1996;99:295.
18. Nubile P, Ferreira da Silva A. Solid-St Electr 1997;41:121.
19. Abramof E, Ferreira da Silva A, Sernelius BE, de Souza JP, Boudinov H. J Mater Res 1997;12:641.
20. Mottm NF. Philos Mag 1981;44:265.
21. Berggren KF. Philos Mag 1973;27:1027.
22. Ferreira da Silva A. J Appl Phys 1994;76:5249.
23. Ferreira da Silva A, Veissid N, An CY, Caetano de Souza J, Batista da Silva AV, César Farias P, Cruz MT F. J Appl Phys 1995;78:5822.
24. Ghosh AK, Som KK, Chattejee S, Chaudhuri BK. Phys Rev B 1995;51:4842.
25. Tomas SA, Vigil O, Alvarado-Gil JJ, Lozada-Morales R, Zelaya-Angel O, Vargas H, Ferreira da Silva A. J Appl Phys 1995;78:2204.
26. Zelaya-Angel O, Alvarado-Gil JJ, Lozada-Morales R, Vargas H, Ferreira da Silva A. Appl Phys Lett 1994;64:291.
27. Ferreira da Silva A, Veissid N, Ying-An C, Pepe I, Barros de Oliveira N, Batista da Silva AV. Appl Phys Lett 1996;69:1930.
28. Veje E, Ferreira da Silva A, Berggren KF, Pepe I, Batista da Silva V, In: Schmuki P, Lockwood DJ, Isaacs H, Bsiesy A, editors. Pits and pores: formation, properties, and significance for advanced luminescent materials. The Electrochemical Society, 1997. PV 97-7:242.
29. Poortmans J, Jain SC, Totterdell DHJ, Caymax M, Nijs JF, Mertens RP, Van Overstraeten R. Solid-St Electr 1993;36:1763.
30. Pankove JI. Optical processes in semiconductors. New York, Dover, 1975:34.
31. Jain SC, Roulston DJ. Solid-St Electr 1991;34:453.
32. People R. Phys Rev B 1985;32:1405.