An accurate, experimentally verified electron minority carrier mobility model for Si and SiGe

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 101-103

  Jungemann, C ^a   Heinemann, B ^b   Tittelbach Helmrich, K ^b   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON MOBILITY; HETEROJUNCTION BIPOLAR TRANSISTORS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY;

MAGNETOCONDUCTANCE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034452554     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904268     Document Type: Article

References (14)

1. SiGe-HBTs for mobile communication
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4. Electron transport in heavily doped bases of InP/GaInAs HBT's probed by magneto transport experiments
5. Technique for measurement of the minority carrier mobility with a bipolar junction transistor
6. x (0.2≤x≤0.4) layers
7. The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials
8. Ionization of impurities in silicon
9. Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile
10. Galvanomagnetic effects in n-type silicon
11. Low cost, 50 GHz Fmax Si/SiGe heterojunction bipolar transistor technology with epi-free collector wells