Determination of bandgap narrowing and parasitic energy barriers in sige hbt's integrated in a bipolar technology

IEEE Transactions on Electron Devices

Volumn 44, Issue 5, 1997, Pages 715-722

  Le Tron, Benedicte ^a,b   Hashim, M D R ^c   Ashburn, Peter ^d   Mouis, Mireille ^a   Chantre, Alain ^b   Vincent, Gilbert ^c  

^a ORANGE LABS   (France)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^d UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; DEGRADATION; ENERGY GAP; FREQUENCY RESPONSE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

ENERGY BARRIERS;

HETEROJUNCTIONS;

EID: 0031146992     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.568031     Document Type: Article

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