Temperature dependent minority electron mobilities in strained si1-xgex (0. 2 < × < 0. 4) layers

IEEE Transactions on Electron Devices

Volumn 47, Issue 4, 2000, Pages 883-890

  Rieh, Jae Sung ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETOTRANSPORT;

CARRIER MOBILITY; MAGNETIC FIELD EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033876582     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.831009     Document Type: Article

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