Responsivity and impact lonization coefficients of sii_xgex photodiodes

IEEE Transactions on Electron Devices

Volumn 43, Issue 6, 1996, Pages 977-981

  Lee, Jinju ^a   Augusto, L ^a   Li, S H ^b   Bhattacharya, Pallab K ^b  

^a The Department of Civil and Environmental Engineering   (United States)

^b SGS Thompson Microelectronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; IONIZATION OF SOLIDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH;

BREAKDOWN VOLTAGES; DARK CURRENTS; IMPACT IONIZATION COEFFICIENTS; SPECTRAL RESPONSE;

PHOTODIODES;

EID: 0030169049     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502133     Document Type: Article

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