The impact of self-assembled monolayer thickness in hybrid gate dielectrics for organic thin-film transistors

Organic Electronics

Volumn 10, Issue 8, 2009, Pages 1442-1447

  Jedaa, Abdesselam ^a   Burkhardt, Martin ^a   Zschieschang, Ute ^b   Klauk, Hagen ^b   Habich, Dana ^c   Schmid, Günter ^c   Halik, Marcus ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c SIEMENS AG   (Germany)

Author keywords

Hybrid gate dielectrics; Organic thin film transistor; Self assembled monolayer

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CHEMICAL SENSORS; CYCLIC VOLTAMMETRY; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FILM THICKNESS; INDIUM COMPOUNDS; PHOTOTRANSISTORS; QUALITY CONTROL; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; TIN OXIDES;

ELECTRICAL CHARACTERISTIC; HYBRID DIELECTRICS; INSULATING PROPERTIES; ORGANIC THIN FILM TRANSISTORS; PHOSPHONIC ACIDS; PLASMA CONDITIONS; RELATIVE CONTRIBUTION; VOLTAMMETRY MEASUREMENTS;

GATE DIELECTRICS;

EID: 71849101614     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.08.006     Document Type: Article

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