Self-assembled molecular monolayers as ultrathin gate dielectric in carbon nanotube transistors

Applied Physics Letters

Volumn 93, Issue 14, 2008, Pages

  Robert, Gaël ^a   Derycke, Vincent ^a   Goffman, Marcelo F ^a   Lenfant, Stéphane ^b   Vuillaume, Dominique ^b   Bourgoin, Jean Philippe ^a  

^a CNRS UMR 3299   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DIELECTRIC MATERIALS; ELECTRON ENERGY LEVELS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); MECHANICAL PROPERTIES; MONOLAYERS; MOSFET DEVICES; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; ORGANIC CARBON; SELF ASSEMBLED MONOLAYERS; SELF ASSEMBLY; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSISTORS;

BAND-TO-BAND TUNNELING; CARBON NANOTUBE TRANSISTORS; GATE EFFICIENCY; MOLECULAR LAYERS; MOLECULAR MONOLAYERS; NANO-SCALE TRANSISTORS; OCTADECANE THIOL; ORGANIC DIELECTRICS; SELF-ASSEMBLED; SINGLE-WALLED CARBON; SUBTHRESHOLD SLOPES; ULTRA-THIN GATE DIELECTRICS;

CARBON NANOTUBES;

EID: 53649100159     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2992586     Document Type: Article

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