Microcontact-printed self-assembled monolayers as ultrathin gate dielectrics in organic thin-film transistors and complementary circuits

Langmuir

Volumn 24, Issue 5, 2008, Pages 1665-1669

  Zschieschang, Ute ^a   Halik, Marcus ^b   Klauk, Hagen ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CIRCUIT THEORY; ETCHING; GATE DIELECTRICS; THIN FILM TRANSISTORS;

COMPLEMENTARY CIRCUITS; ULTRATHIN GATE DIELECTRICS;

SELF ASSEMBLED MONOLAYERS;

EID: 41849113438     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la703818d     Document Type: Article

References (32)

1. (a) Gamota, D. R., Brazis, P., Kalyanasundaram, K., Zhang, J., Eds.; Printed Organic and Molecular Electronics; Kluwer Academic Publishers: Boston, 2004.
2. (b) Klauk, H., Ed.; Organic Electronics: Materials, Manufacturing and Applications; Wiley-VCH: Weinheim, Germany, 2006.
3. Garnier, F.; Hajlaoui, R.; Yassar, A.; Srivastava, P. Science 1994, 265, 1684.
4. Bao, Z.; Feng, Y.; Dodabalapur, A.; Raju, V. R.; Lovinger, A. J. Chem. Mater. 1997, 9, 1299.
5. Rogers, J. A.; Bao, Z.; Raju, V. R. Appl. Phys. Lett. 1998, 72, 2716.
6. Sirringhaus, H.; Kawase, T.; Friend, R. H.; Shimoda, T.; Inbasekaran, M.; Wu, W.; Woo, E. P. Science 2000, 290, 2123.
7. Rogers, J. A.; Bao, Z.; Baldwin, K.; Dodabalapur, A.; Crone, B.; Raju, V. R.; Kuck, V.; Katz, H.; Amundson, K.; Ewing, J.; Drzaic, P. Proc. Natl. Acad. Sci. U.S.A. 2001, 98, 4835.
8. (a) Loo, Y. L.; Willett, R. L.; Baldwin, K. W.; Rogers, J. A. Appl. Phys. Lett. 2002, 81, 562.
9. (b) Kim, C.; Shtein, M.; Forrest, S. R. Appl. Phys. Lett. 2002, 80, 4051.
10. Blanchet, G. B.; Loo, Y. L.; Rogers, J. A.; Gao, F.; Fincher, C. R. Appl. Phys. Lett. 2003, 82, 463.
11. Zschieschang, U.; Klauk, H.; Halik, M.; Schmid, G.; Dehm, C. Adv. Mater. 2003, 15, 1147.
12. Arias, A. C.; Ready, S. E.; Lujan, R.; Wong, W. S.; Paul, K. E.; Salleo, A.; Chabinyc, M. L.; Apte, R.; Street, R. A.; Wu, Y.; Liu, P.; Ong, B. Appl. Phys. Lett. 2004, 85, 3304.
13. Shtein, M.; Peumans, P.; Benziger, J. B.; Forrest, S. R. Adv. Mater. 2004, 16, 1615.
14. Knobloch, A.; Manuelli, A.; Bernds, A.; Clemens, W. J. Appl. Phys. 2004, 96, 2286.
15. (a) Wang, J. Z.; Zheng, Z. H.; Li, H. W.; Huck, W. T. S.; Sirringhaus, H. Nat. Mater. 2004, 3, 171.
16. (b) Sele, C. W.; von Werne, T.; Friend, R. H.; Sirringhaus, H. Adv. Mater. 2005, 17, 997.
17. (a) Sekitani, T.; Takamiya, M.; Noguchi, Y.; Nakano, S.; Kato, Y.; Sakurai, T.; Someya, T. Nat. Mater. 2007, 6, 413.
18. (b) Noh, Y. Y.; Zhao, N.; Caironi, M.; Sirringhaus, H. Nat. Nanotechnol. 2007, 2, 784.
19. Bartzsch, M.; Kempa, H.; Otto, M.; Hübler, A.; Zielke, D. Org. Electron. 2007, 8, 431.
20. Liu, S.; Wang, W. M.; Mannsfeld, S. C. B.; Locklin, J.; Erk, P.; Gomez, M.; Richter, F.; Bao, Z. Langmuir 2007, 23, 7428.
21. Huang, C.; Katz, H. E.; West, J. E. Langmuir 2007, 23, 13223-13231.
22. Xia, Y.; Mrksich, M.; Kim, E.; Whitesides, G. M. J. Am. Chem. Soc. 1995, 117, 9576.
23. (a) Folkers, J. P.; Gorman, C. B.; Laibinis, P. E.; Buchholz, S.; Whitesides, G. M. Langmuir 1995, 11, 813.
24. (b) Ramsier, R. D.; Henriksen, P. N.; Gent, A. N. Surf. Sci. 1988, 203, 72.
25. (c) Bram, C.; Jung, C.; Stratmann, M. Fresenius J. Anal. Chem. 1997, 358, 108.
26. Goetting, L. B.; Deng, T.; Whitesides, G. M. Langmuir 1999, 15, 1182.
27. Klauk, H.; Zschieschang, U.; Pflaum, J.; Halik, M. Nature 2007, 445, 745.
28. Klauk, H.; Zschieschang, U.; Halik, M. J. Appl. Phys 2007, 102, 074514.
29. Crone, B. K.; Dodabalapur, A.; Sarpeshkar, R.; Filas, R. W.; Lin, Y. Y.; Bao, Z.; O'Neill, J. H.; Li, W.; Katz, H. E. J. Appl. Phys. 2001, 89, 5125.
30. Klauk, H.; Halik, M.; Zschieschang, U.; Eder, F.; Rohde, D.; Schmid, G.; Dehm, C. IEEE Trans. Electron Devices 2005, 52, 618.
31. Jones, B. A.; Ahrens, M. J.; Yoon, M. H.; Facchetti, A.; Marks, T. J.; Wasielewski, M. R. Angew. Chem., Int. Ed. 2004, 43, 6363.
32. Drury, C. J.; Mutsaers, C. M. J.; Hart, C. M.; Matters, M.; de Leeuw, D. M. Appl. Phys. Lett. 1998, 73, 108.