Interpretation of scanning capacitance microscopy for thin oxides characterization

Thin Solid Films

Volumn 517, Issue 24, 2009, Pages 6721-6725

  Ligor, O ^a   Gautier, B ^a   Descamps Mandine, A ^a,b   Albertini, D ^a   Baboux, N ^a   Militaru, L ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b Consortium Lyonnais d'Analyse par Microscopie à Sonde Locale ^*  (France)

Author keywords

Atomic force microscopy; Capacitors; Metal oxide interface; Scanning capacitance microscopy; Silicon oxide

Indexed keywords

AFM CANTILEVERS; AFM TIP; ATOMIC FORCE MICROSCOPES; C-V CURVE; ELECTRICAL CONTACTS; HYSTERETIC BEHAVIOUR; INVERSION REGIONS; MACROSCOPIC MEASUREMENTS; MACROSCOPIC SIZES; METAL OXIDE INTERFACE; METALLIC TIPS; NANO SCALE; OXIDE LAYER; SCANNING CAPACITANCE MICROSCOPY; SCANNING CAPACITANCE SPECTROSCOPY; THERMAL SILICON; THIN OXIDES; VOLTAGE CURVE;

ATOMIC FORCE MICROSCOPY; ATOMS; CAPACITANCE; CAPACITORS; SCANNING; SILICA; SILICON OXIDES;

METALLIC COMPOUNDS;

EID: 71749083877     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.05.026     Document Type: Article

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