Atomic force microscope laser illumination effects on a sample and its application for transient spectroscopy

Applied Physics Letters

Volumn 83, Issue 12, 2003, Pages 2486-2488

  Buh, G H ^a,b,c   Kopanski, J J ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Seoul National University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; LIGHT TRANSMISSION; MEASUREMENT THEORY; SILICON; VOLTAGE MEASUREMENT;

PHOTOEXCITATION;

LASER BEAMS;

EID: 0142023858     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1613800     Document Type: Article

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