Physical mechanism of oxide interfacial traps, carrier mobility degradation and series resistance on contrast reversal in scanning-capacitance-microscopy dopant concentration extraction

Applied Physics Letters

Volumn 87, Issue 5, 2005, Pages

  Wong, K M ^a   Chim, W K ^a   Yan, J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DOPING (ADDITIVES); ELECTRIC RESISTANCE; MICROSCOPIC EXAMINATION; SEMICONDUCTOR MATERIALS; SIGNAL PROCESSING;

CONCENTRATION EXTRACTION; NONMONOTONIC RESPONSE; REVERSAL EFFECT; SCANNING-CAPACITANCE-MICROSCOPY;

CARRIER MOBILITY;

EID: 33645523978     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2006979     Document Type: Article

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