Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 436-439

  Polspoel, W ^a   Vandervorst, W ^a,b   Petry J ^c   Conard, T ^a   Benedetti, A ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

C AFM; High k; Leakage current; Nitridation

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); OXIDATION; PERMITTIVITY; X RAY PHOTOELECTRON SPECTROSCOPY;

CONDUCTING ATOMIC FORCE MICROSCOPY (C-AFM); DIELECTRIC LAYERS; DOPANTS; NITRIDATION;

MOSFET DEVICES;

EID: 19944415603     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.102     Document Type: Conference Paper

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