Evaluation of scanning capacitance microscopy sample preparation by focused ion beam

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1554-1557

  Rodriguez, N ^a,b   Adrian, J ^a   Grosjean, C ^a   Haller, G ^a   Girardeaux, C ^b   Portavoce, A ^b  

^a STMICROELECTRONICS   (France)

^b AIX MARSEILLE UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; PLASMA ETCHING; POLISHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES;

FOCUSED ION BEAM (FIB); PROFILING INSTRUMENT; QUALITATIVE ANALYSIS; SCANNING CAPACITANCE MICROSCOPY (SCM);

ION BEAMS;

EID: 33747770995     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.019     Document Type: Article

References (4)

1. Digital Instruments Veeco Metrology, Application Modules: Dimension and MultiMode Manual Rev D, 2003.
2. Fillmore D.K., and Wang S. Investigation of Low-Energy Focused Ion Beam Milling for Scanning Capacitance Microscopy Sample Preparation. ISTFA (2004)
3. Brezna W. and Co, Focused ion beam induced damage in silicon studied by scanning capacitance microscopy, Semicond Sci Technol 2003;18:195-8.
4. Jarausch K., Richards J., Denney L., Guichard A., and Russell P. Site specific 2-D implant profiling using FIB assisted SCM. ISTFA (2002)