메뉴 건너뛰기




Volumn 50, Issue 9-10, 2006, Pages 1479-1482

Comparison of scanning capacitance microscopy measurements in open and closed loop modes on highly doped silicon monolayers

Author keywords

Bevel; Doping profile; Scanning capacitance microscopy; Silicon monolayers

Indexed keywords


EID: 33750286585     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.09.001     Document Type: Letter
Times cited : (2)

References (16)
  • 4
    • 33750316146 scopus 로고    scopus 로고
    • Mc Bride DE, Kopanski JJ, Belzer BJ. Gate oxide formation under mild conditions for SCM. In: Proc of the international conference for characterization and metrology for ULSI technology, Austin (Texas, USA), March 24-28, 2003. p. 657-61.
  • 5
    • 33750361889 scopus 로고    scopus 로고
    • Lim VSW, Yaoyao J, Trigg A. Study of oxide quality for SCM measurements. In: Proc of the international conference for characterization and metrology for ULSI technology, Austin (Texas, USA), March 24-28, 2003. p. 667-71.
  • 13
    • 33750340499 scopus 로고    scopus 로고
    • Digital Instrument (Veeco Metrology Group), Quadrex Phase Imaging, Support Note No. 322-C; Santa Barbara USA; 2003.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.