Donor binding energies in group III-nitride-based quantum wells: Influence of internal electric fields

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 221-223

  Morel, A ^a   Lefebvre, P ^a   Taliercio, T ^a   Gallart, M ^a   Gil, B ^a   Mathieu, H ^a  

^a CNRS   (France)

Author keywords

Donor binding energies; GaN AlGaN quantum wells; Internal electric fields

Indexed keywords

BINDING ENERGY; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

DONOR BINDING ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035933021     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00772-8     Document Type: Article

References (22)