Effect of halogen in high-density oxygen plasmas on photoresist trimming

AIChE Journal

Volumn 50, Issue 7, 2004, Pages 1578-1588

  Sin, Chian Yuh ^a,b   Chen, Bing Hung ^a,c   Loh, W L ^b   Yu, J ^b   Yelehanka, P ^b   See, A ^b   Chan, L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Activation energy; Halogen; ICP etcher; Oxygen plasma; Photoresist trimming; Resist profiles; Trim rate

Indexed keywords

ACTIVATION ENERGY; INDUCTIVELY COUPLED PLASMA; PASSIVATION; REACTION KINETICS; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH-DENSITY OXYGEN PLASMAS; PHOTORESIST TRIMMING;

HALOGEN COMPOUNDS;

CHLORINE DERIVATIVE; FLUORINE DERIVATIVE; HALOGEN; HYDROBROMIC ACID; OXYGEN;

OXYGEN; PHOTOCHEMISTRY; PLASMA;

ARTICLE; ATOMIC EMISSION SPECTROMETRY; BINDING COMPETITION; BINDING SITE; CHEMICAL ANALYSIS; DENSITY; DEVICE; DRUG MIXTURE; FILM; PASSIVE TRANSPORT; PHOTODYNAMICS; PHOTORESIST TRIMMING; PHYSICAL CHEMISTRY; PLASMA CHEMISTRY; POLYMERIZATION; REACTION ANALYSIS; REACTION OPTIMIZATION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 3042767253     PISSN: 00011541     EISSN: None     Source Type: Journal    
DOI: 10.1002/aic.10145     Document Type: Article

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