Photo-resist trimming for sub 0.1 μm generation integrated circuit devices by Cl2/O2 transform coupled plasma

Microelectronic Engineering

Volumn 75, Issue 2, 2004, Pages 201-209

  Yen, Tsung Fu ^a   Chiu, C M ^a   Chiu, K F ^b  

^a ProMOS Technologies Inc   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Critical dimension; Resist trimming; Transform coupled plasma

Indexed keywords

MORPHOLOGY; MOS DEVICES; OXYGEN; PHOTOLITHOGRAPHY; PHOTORESISTS; POLYSILICON; SCANNING ELECTRON MICROSCOPY;

CRITICAL DIMENSIONS (CD); GATE STACK ETCHING; RESIST TRIMMING; TRANSFORM COUPLED PLASMA (TCP);

INTEGRATED CIRCUITS;

EID: 3142708886     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.05.004     Document Type: Article

References (17)

1. Bates A.K., Rothschild M., Bloomstein T.M., Fedynyshyn T.H., Kunz R.R., Liberman V., Switkes M. IBM J. Res. Develop. 45(5):2001;605-614.
2. Medeiros D.R., Aviram A., Guarnieri C.R., Huang W.-S., Kwong R., Magg C.K., Mahorowala A.P., Moreau W.M., Petrillo K.E., Angelopoulos M. IBM J. Res. Develop. 45(5):2001;639-650.
3. Sin C.Y., Chen B.H., Loh W.L., Yu J., Yelehanka P., See A., Chan L. Ind. Eng. Chem. Res. 42(24):2003;6080-6087.
4. Takagi K., Ikeda A., Fujimura T., Kuroki Y. Thin Solid Films. 386(2,15):2001;160-164.
5. Chemali C.E.l., Freudenberg J., Hankinson M., Collison W., Ni T. J. Vac. Sci. Technol. B. 21(6):2003;2304-2312.
6. Kataoka Y., Saito S., Omiya K. Jpn. J. App. Phys. 38(6A):1999;3731-3735.
7. Asano K., Choi Y.K., King T.J., Hu C.M. IEEE Trans. Electron. Dev. 48(5):2001;1004-1006.
8. Ono M., Saito M., Yoshitomi T. J. Vac. Sci. Technol. B. 13:1995;1740-1743.
9. Maeda T., Ishii K., Hiroshima H. Supperlattice Microstr. 28(5-6):2000;469-475.
10. Dobisz E.A., Fedynyshyn T.N., Ma D., Shirey L.M., Bass R. J. Vac. Sci. Technol. B. 16(6):1998;3773-3778.
11. Chung J., Jeng M.-C., Moon J.E., Wu A.T., Chan T.Y., Ko P.K., Hu C.M. IEEE Electron. Dev. Lett. 9:1988;186-188.
12. Sin Chian-Yuh, Chen Bing-Hung, Loh W.L., Yu J., Yelehanka P., See A., Chan L. J. Vac. Sci. Technol. B. 20(5):2002;1974-1981.
13. Arnold J.C., Sawin H.H. J. Appl. Phys. 70:1991;5314-5317.
14. Gottscho R.A., Jurgensen C.W. J. Vac. Sci. Technol. B. 10:1992;2133-2147.
15. Yeh W.K., Lin T., Chen C.M., Chou J.W., Sun S.W. Jpn. J. Appl. Phys. 38(4B):1999;2300-2305.
16. Tabara S. Jpn. J. Appl. Phys. 37(6A):1998;3570-3575.
17. White D.A., Boning D., Butler W., Barna G.G. IEEE Trans. Semi. Manu. 10(1):1997;52-61.