Structure, chemistry and electrical properties of extended defects in crystalline silicon for photovoltaics

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 8, 2009, Pages 1847-1855

  Seibt, M ^a   Abdelbarey, D ^a   Kveder, V ^b   Rudolf, C ^a   Saring, P ^a   Stolze, L ^c   Voss O ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c Q Cells AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DEFECTS; BULK MICRODEFECTS; COPPER SILICIDE; CRYSTALLINE SILICONS; ELECTRICAL PROPERTY; EXTENDED DEFECT; GETTERING; GETTERING PROCESS; INDUCED CURRENT MEASUREMENTS; LIMITING PROCESS; METAL IMPURITIES; METAL SILICIDE; MULTI-METALS; MULTICRYSTALLINE SILICON (MC-SI); MUTUAL INTERACTION; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAICS; RECOMBINATION ACTIVITY; RICH CONDITIONS; SI PRECIPITATES; SMALL-ANGLE GRAIN BOUNDARIES;

COPPER; DEFECTS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; IMPURITIES; METALS; NICKEL; NICKEL ALLOYS; PHOSPHORUS; PHOTOVOLTAIC EFFECTS; POINT DEFECTS; POLYSILICON; SILICIDES; TRANSMISSION ELECTRON MICROSCOPY;

PRECIPITATION (CHEMICAL);

EID: 70949107032     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881470     Document Type: Conference Paper

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