Localisation and identification of recombination-active extended defects in crystalline silicon by means of focused ion-beam preparation and transmission electron microscopy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 8, 2009, Pages 1862-1867

  Stolze, L ^a,b   Saring, P ^a   Rudolf, C ^a   Seibt, M ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b Q Cells AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEFECTS; CHEMICAL ETCHING; CRYSTALLINE SILICONS; EXTENDED DEFECT; IN-SITU; LOCALISATION; TEM; TEM SAMPLE PREPARATION; TRANSITION METAL IMPURITIES;

DEFECTS; ETCHING; FOCUSED ION BEAMS; PRECIPITATION (CHEMICAL); TRANSITION METALS;

TRANSMISSION ELECTRON MICROSCOPY;

EID: 70949087792     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881471     Document Type: Conference Paper

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