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Applied Physics A: Materials Science and Processing

Volumn 97, Issue 4, 2009, Pages 877-881

Effect of measuring factors on ferroelectric properties of Bi 3.15Nd0.85Ti3O12 thin films prepared by sol-gel method for non-volatile memory

(6) Guo, Dongyun a Wang, Chuanbin a Shen, Qiang a Zhang, Lianmeng a Li, Meiya b Liu, Jun b

a Wuhan University of Technology (China)

b WUHAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AURIVILLIUS PHASE; COERCIVE FIELD; ENVIRONMENTAL TEMPERATURE; FERROELECTRIC PROPERTY; GENERAL TRENDS; MEMORY RETENTION; NON-VOLATILE MEMORIES; RANDOM ORIENTATIONS; REMANENT POLARIZATION; ROOM TEMPERATURE; SI SUBSTRATES; SOL-GEL METHODS; WORKING FREQUENCY; XRD;

FERROELECTRICITY; GELS; NEODYMIUM; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS;

FILM PREPARATION;

EID: 70450228578 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-009-5349-1 Document Type: Article

Times cited : (24)

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