A highly reliable 3-D integrated SBT ferroelectric capacitor enabling FeRAM scaling

IEEE Transactions on Electron Devices

Volumn 52, Issue 4, 2005, Pages 447-453

  Goux, Ludovic ^a   Russo, Guglielmo ^b   Menou, Nicolas ^c   Lisoni, Judit G ^a   Schwitters, Michael ^d   Paraschiv, Vasile ^a   Maes, David ^a   Artoni, Cesare ^b   Corallo, Giuseppina ^b   Haspeslagh, Luc ^a   Wouters, Dirk J ^a   Zambrano, Raffaele ^b   Muller, Christophe ^c  

^a IMEC   (Belgium)

^b STMICROELECTRONICS   (Italy)

^c UNIVERSITÉ DE TOULON   (France)

^d ELEMENT SIX LTD   (United Kingdom)

Author keywords

Ferroelectric memories; Metal organic chemical vapor deposition (MOCVD); Reliability testing; Scaling; Sr0.8Bi2.2 Ta2O9 (SBT); Three dimensional (3 D) capacitors

Indexed keywords

ANNEALING; CAPACITORS; CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; RANDOM ACCESS STORAGE; RELIABILITY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; STRONTIUM COMPOUNDS;

FERROELECTRIC CAPACITOR; FERROELECTRIC MEMORIES; FERROELECTRIC RANDOM ACCESS MEMORIES; RELIABILITY TESTING; SCALING; STRONTRIUM BISMUTH TANTALUM OXIDES; THREE DIMENSIONAL CAPACITORS;

FERROELECTRIC DEVICES;

EID: 20244367171     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.845082     Document Type: Article

References (18)

1. S.-H. Oh, S.-K. Hong, K.-H. Noh, S.-Y. Kweon, N.-K. Kim, Y.-H. Yang, J.-G. Kim, J.-Y. Seong, I.-W. Jang, S.-H. Park, K.-H. Bang, K.-N. Lee, H.-J. Jeong, J.-H. Son, S.-S. Lee, E.-S. Choi, H.-J. Sun, S.-J. Yeom, K.-D. Ban, J.-W. Park, G.-D. Park, S.-Y. Song, J.-H. Shin, S.-I. Lee; and Y.-J. Park, "Noble FeRAM technologies with MTP cell structure and BLT ferroelectric capacitors," in IEDM Tech. Dig., 2003, pp. 835-838.
2. Y. J. Song, H. J. Joo, N. W. Jang, H. H. Kim, J. H. Park, H. Y. Kang, S. Y. Lee, and K. Kim, "Highly manufacturable and reliable 32 Mb FRAM technology with novel BC and capacitor cleaning process," in VLSI Symp. Tech. Dig., 2003, pp. 169-170.
3. Y. Nagano, T. Mikawa, T. Kutsunai, S. Hayashi, T. Nasu, S. Natsume, T. Tatsunari, T. Ito, S. Goto, H. Yano, A. Noma, K. Nagahashi, T. Miki, M. Sakagami, Y. Izutsu, T. Nakakuma, H. Hirano, S. Iwanari, Y. Murakuki, K. Yamaoka, Y. Goho, Y. Judai, E. Fujii, and K. Sato, "0.18 μm SBT-based embedded FeRAM operating at a low voltage of 1.1 V," in VLSI Symp. Tech. Dig., 2003, pp. 171-172.
4. H. McAdams, R. Acklin, T. Blake, J. Fong, D. Liu, S. Madan, T. Moise, S. Natarajan, N. Qian, Y. Qui, J. Roscher, A. Seshadri, S. Summerfelt, X. Du, J. Eliason, W. Kraus, R. Lanham, F. Li, C. Pietrzyk, and J. Rickes, "A 64 Mbit embedded FeRAM utilizing a 130 nm, 5LM Cu/FSG logic process," in Proc. VLSI Circ. Dig., 2003, pp. 175-176.
5. R. Zambrano, "Challenges for integration of embedded FeRAMs in the sub-180 nm regime," Integr. Ferroelectrics, vol. 53, pp. 247-255, 2003.
6. N. Nagel, R. Bruchhaus, K. Hornik, U. Egger, H. Zhuang, H.-O. Joachim, T. Rohr, G. Beitel, T. Ozaki, and I. Kunishima, "New highly scalable 3 dimensional chain FeRAM cell with vertical capacitor," in VLSI Symp. Tech. Dig., 2004, pp. 146-147.
7. 9 ferroelectric layers," in Proc. Mater. Res. Soc. Symp., vol. 784, 2004, pp, 3-8.
8. "IEEE Standard Definitions of Primary Ferroelectric Terms," Group on sonics and ultrasonics of the IEEEE ultrasonics, ferroelectrics and frequency control society, ANSI/IEEE Std 180-1986, 1986.
9. R. Waser, O. Lohse, M. Grossmann, U. Boettger, D. Bolten, and S. Tiedke, "Frequency dependence of the coercive voltage of ferroelectric thin films," in Proc. Mater. Res. Soc. Symp., vol. 596, 2000, pp. 291-299.
10. M. Schumacher and R. Waser, "Curie-Von Schweidler behavior observed in ferroelectric thin films and comparison to superparaelectric thin film materials," Integr. Ferroelectrics, vol. 22, no. 1-4, pp. 629-641, 1998.
11. 3 on Pt-coated silicon substrates," in Proc. Mater. Sci. Semicon. Symp., vol. 5, 2002, pp. 189-194.
12. 9 capacitors for FeRAM applications," J. Electrochem. Soc., vol. 151, no. 5, pp. F113-F117, 2004.
13. 9 ferroelectric thin films through the complex alkoxide method: Effect of functional group, hydrolysis and water vapor treatment," Jpn. J. Appl. Phys., vol. 37, pp. 5178-5184, 1998.
14. 9 thin films grown by MOCVD for high density FeRAM applications," Integr. Ferroelectrics, vol. 21, pp. 367-379, 1998.
15. 9 thin films with modified Sr composition," Jpn. J. Appl. Phys., vol. 37, pp. 5198-5202, 1998.
16. 9 thin films with polarization reversal," Jpn. J. Appl. Phys., vol. 39, pp. 5481-5484, 2000.
17. Y. Shimada, "Testing and reliability," in Ferroelectric Random Access Memories: Fundamentals and Applications, H. Ishiwara, M. Okuyama, and Y. Arimoto, Eds. Berlin, Germany: Springer-Verlag, 2004, pp. 177-194.
18. G. R. Fox, R. Bailey, W. B. Kraus, F. Chu, S. Sun, and T. Davenport, "The current status of FeRAM," in Ferroelectric Random Access Memories: Fundamentals and Applications, H. Ishiwara, M. Okuyama, and Y. Arimoto, Eds. Berlin, Germany: Springer-Verlag, 2004, pp. 139-148