Effect of Mo substitution on ferroelectric properties of Bi3.6 Ho0.4 Ti3 O12 thin films prepared by sol-gel method

Applied Physics Letters

Volumn 93, Issue 26, 2008, Pages

  Guo, Dongyun ^a   Wang, Chuanbin ^a   Shen, Qiang ^a   Zhang, Lianmeng ^a   Li, Meiya ^b   Liu, Jun ^b  

^a Wuhan University of Technology   (China)

^b WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COLLOIDS; ELECTRIC PROPERTIES; FERROELECTRIC FILMS; FERROELECTRICITY; GELATION; GELS; HOLMIUM; MICROCRYSTALLINE SILICON; MOLYBDENUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS;

AURIVILLIUS; COERCIVE FIELDS; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTIES; FERROELECTRIC PROPERTIES; REMANENT POLARIZATIONS; SI SUBSTRATES; SITE SUBSTITUTIONS; SOL-GEL METHODS;

FILM PREPARATION;

EID: 58149215610     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3063121     Document Type: Article

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