Bandgap investigations and the effect of the in and Al concentration on the optical properties of InxAla-xN

Journal of the Optical Society of America B: Optical Physics

Volumn 26, Issue 11, 2009, Pages 2181-2184

  Maqbool, Muhammad ^a   Amin, Bin ^b   Ahmad, Iftikhar ^b  

^a BALL STATE UNIVERSITY   (United States)

^b HAZARA UNIVERSITY   (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; ENERGY GAP; INDIUM; OPTICAL CONDUCTIVITY; REFLECTION;

ABSORPTION CO-EFFICIENT; CONCENTRATION-DEPENDENT; FRACTIONAL CONCENTRATION; FREQUENCY DEPENDENT; HIGHER FREQUENCIES; INDIUM CONCENTRATION; LOWER FREQUENCIES; RESULTING MATERIALS;

OPTICAL PROPERTIES;

EID: 70450178121     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.26.002181     Document Type: Article

References (27)

1. +3 for optical devices applications," J. Opt. Soc. Am. B 26, 998-1001 (2009).
2. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, "Universal bandgap bowing in group-III nitride alloys," Solid State Commun. 127, 411-414 (2003).
3. M. Maqbool, M. E. Kordesch, and I. Ahmad, "Electron penetration depth in amorphous AlN by exploiting the luminescence of Ho and Tm ions added to AlN," Curr. Appl. Phys. 9, 417-421 (2009).
4. 3+ cathodoluminescence," Appl. Phys. Lett. 91, 193511 (2007).
5. M. Maqbool and Iftikhar Ahmad, "Spectroscopy of gadolinium ion and disadvantages of gadolinium impurity in tissue compensators and collimators, used in radiation treatment planning," Spectroscopy (Amsterdam) 21, 205-210 (2007).
6. J. M. Khoshman and M. E. Kordesch, "Spectroscopic ellipsometry characterization of amorphous aluminum nitride and indium nitride thin films," Phys. Status Solidi C 2, 2821-2827 (2005).
7. E. Iliopoulos, A. Adikimenakis, C. Giesen, M. Heuken, and A. Georgakilas, "Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry," Appl. Phys. Lett. 92, 191907 (2008).
8. J. Wu, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, "Unusual properties of the fundamental band gap of InN," Appl. Phys. Lett. 80, 3967-3969 (2002).
9. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, "Optical bandgap energy of wurtzite InN," Appl. Phys. Lett. 81, 1246-1248 (2002).
10. T. L. Tansley and C. P. Foley, "Optical band gap of indium nitride," J. Appl. Phys. 59, 3241-3244 (1986).
11. K. Butcher, H. Hirshy, R. Perks, M. Fouquet, and P. Chen, "Stoichiometry effects and the Moss-Burstein effect for InN," Phys. Status Solidi A 203, 66-74 (2006).
12. O. K. Andersen, "Linear methods in band theory," Phys. Rev. B 12, 3060-3083 (1975).
13. S. Hernández, K. Wang, D. Amabile, E. Nogales, D. Pastor, R. Cuscó, L. Artus, R. W. Martín, K. P. O'Donnell, and I. M. Watson, "Structural and optical properties of MOCVD InAlN epilayers," Mater. Res. Soc. Symp. Proc. 892, 557-562 (2006).
14. 1-xN Alloys," Mater. Res. Soc. Symp. Proc. 798, paper Y5.69, 1-5 (2004).
15. A. Ayuela, J. Enkovaara, K. Ullakko, and R. M. Nieminen, "Structural properties of magnetic Heusler alloys," J. Phys.: Condens. Matter 11, 2017-2026 (1999).
16. K. Schwarz and P. Blaha, "Solid state calculations using WIEN2k," Comput. Mater. Sci. 28, 259-273 (2003).
17. P. Blaha, K. Schwarz, G. K. H. Madsen, D. Kvanicka, and J. Luitz, WIEN2K, An Augmented Plane Wave Plus Local Orbitals Program for Calculating Crystal Properties (Vienna Univ. of Technology, 2001).
18. G. Rahman, S. Cho, and S. C. Hong, "Half metallic ferromagnetism of Mn doped AlSb: A first principles study," Phys. Status Solidi B 244, 4435-4438 (2007).
19. S. Mecabih, K. Benguerine, N. Benosman, B. Abbar, and B. Bouhafs, "Generalized gradient calculations of magneto- electronic properties for diluted magnetic semiconductors ZnMnS and ZnMnSe," Physica B 403, 3452-3458 (2008).
20. 1-xN alloys," Phys. Rev. B 58, 1928-1933 (1998).
21. 1-y double heterostructures grown on InP substrates," Appl. Phys. Lett. 80, 4570-4572 (2002).
22. M. L. Benkhedir, M. S. Aida, A. Stesmans, and G. J. Adriaenssens, "Experimental studies of the density of states in the band gap of a-Se," J. Optoelectron. Adv. Mater. 7, 329-332 (2005).
23. A. Koizumi, H. Moriya, N. Watanabe, Y. Nonogaki, Y. Fujiwara, and Y. Takeda, "Er-related luminescence in Er, O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy," Appl. Phys. Lett. 80, 1559-1561 (2002).
24. H. Hirayama, A. Kinoshita, A. Hirata, and Y. Aoyagi, "Room- temperature intense 320 nm ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells," Appl. Phys. Lett. 80, 1589-1591 (2002).
25. A. Bhattacharyya, S. Lyer, E. Iliopoulos, A. V. Sampath, J. Cabalu, and I. Friel, "High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors," J. Vac. Sci. Technol. B 20, 1229-1233 (2002).
26. 0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition," Appl. Phys. Lett. 73, 3653-3655 (1998).
27. M. K. Emsley and M. S. Unlu, "Silicon substrates with buried distributed Bragg reflectors for resonant cavityenhanced optoelectronics," IEEE J. Sel. Top. Quantum Electron. 8, 948-955 (2002).