Experimental study of the density of states in the band gap of a-Se

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 1, 2005, Pages 329-332

  Benkhedir, M L ^a,b   Aida, M S ^b   Qamhieh, N ^c   Stesmans, A ^a   Adriaenssens, G J ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b Universite Mentouri Constantine   (Algeria)

^c UNITED ARAB EMIRATES UNIVERSITY   (United Arab Emirates)

Author keywords

Amorphous selenium; Defect centres; Density of states; Photoconductivity

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; CARRIER MOBILITY; CHARGE TRANSFER; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; PHOTOCURRENTS; SANDWICH STRUCTURES;

AMORPHOUS SELENIUM; DEFECT CENTERS; DENSITY OF STATES; TAIL STATES;

SELENIUM;

EID: 15244344009     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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