Silicon substrates with buried distributed Bragg reflectors for resonant cavity-enhanced optoelectronics

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 4, 2002, Pages 948-955

  Emsley, Matthew K ^a,b   Dosunmu, Olufemi ^a,b   Ünlü, M Selim ^a,b  

^a IEEE   (United States)

^b Boston University   (United States)

Author keywords

Distributed Bragg reflector; Photodetector; Resonant cavity enhanced; Silicon; Silicon on insulator

Indexed keywords

DISTRIBUTED BRAGG REFLECTOR; DOUBLE SILICON-ON-INSULATOR PROCESS; RESONANT CAVITY; SILICON BASED OPTOELECTRONICS;

DATA COMMUNICATION SYSTEMS; MIRRORS; OPTICAL DESIGN; OPTOELECTRONIC DEVICES; PHOTODETECTORS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

SILICON WAFERS;

EID: 0036662297     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.801692     Document Type: Article

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