Defect-related density of states in low-band gap InxGa 1-xAs/InAsyP1-y double heterostructures grown on InP substrates

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4570-4572

  Gfroerer, T H ^a   Priestley, L P ^a   Weindruch, F E ^a   Wanlass, M W ^b  

^a DAVIDSON COLLEGE   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; DEFECT LEVELS; DENSITY OF STATE; DOUBLE HETEROSTRUCTURES; EFFICIENCY CURVES; EXPONENTIAL TAIL; INP SUBSTRATES; LATTICE-MATCHED; LATTICE-MISMATCHED; OVERALL RATE; RADIATIVE EFFICIENCY; RADIATIVE RECOMBINATION; RECOMBINATION MODEL;

CRYSTALS; CURVE FITTING; DEFECTS; ENERGY GAP; GALLIUM; GALLIUM ALLOYS;

DEFECT DENSITY;

EID: 79956037396     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1487449     Document Type: Article

References (8)

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