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Volumn 80, Issue 9, 2002, Pages 1559-1561

Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy

(6) Koizumi, A a Moriya, H a Watanabe, N a Nonogaki, Y a Fujiwara, Y a Takeda, Y a

a NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT EXCITATION; EXCITATION PROCESS; INGAAS/GAAS; LUMINESCENCE PROPERTIES; MULTIPLE-QUANTUM-WELL STRUCTURES; O-CODOPED GAAS; ORGANOMETALLIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE EXCITATION MEASUREMENTS; PHOTOLUMINESCENCE SPECTRUM;

DOPING (ADDITIVES); GALLIUM ARSENIDE; IONS; ORGANOMETALLICS; OXYGEN; PHOTODEGRADATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; VAPOR PHASE EPITAXY; VAPORS; X RAY DIFFRACTION;

ERBIUM;

EID: 79955982842 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1456971 Document Type: Article

Times cited : (21)

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