Enhanced cathodoluminescence from an amorphous aln:holmium phosphor by co-doped gd+3 for optical devices applications

Journal of the Optical Society of America B: Optical Physics

Volumn 26, Issue 5, 2009, Pages 998-1001

  Maqbool, Muhammad ^a   Kordesch, Martin E ^b   Kayani, A ^c  

^a BALL STATE UNIVERSITY   (United States)

^b OHIO UNIVERSITY   (United States)

^c WESTERN MICHIGAN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; AMORPHOUS SILICON; HOLMIUM; LUMINESCENCE; OPTICAL DEVICES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ELECTRON EXCITATIONS; ENERGY DISPERSIVE X-RAY; ENHANCED LUMINESCENCE; LUMINESCENCE ENHANCEMENTS; NITROGEN ATMOSPHERES; SPUTTER-DEPOSITED THIN FILMS; THERMAL ACTIVATION; ULTRAVIOLET EMISSION;

AMORPHOUS FILMS;

EID: 67649270846     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.26.000998     Document Type: Article

References (21)

1. M. Maqbool, H. H. Richardson, P. G. Van Patten, and M. E. Kordesch, "Luminescent holmium doped amorphous AlN thin films for use as waveguides and laser cavities, " in Proceedings of Materials Research Society Symposium Y (MRS, 2003), Vol. 798, paper Y5.8.
2. M. Maqbool, H. H. Richardson, and M. E. Kordesch, " Cathodoluminescence of praseodymium doped amorphous AlN, GaN and Turbostratic BN, " in Proceedings of Materials Research Society Symposium E (MRS, 2004), Vol. 831, paper E8.12.
3. H. Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, and H. J. Lozykowski, "Visible and infrared emission of GaN:Er thin films grown by sputtering, " MRS Internet J. Nitride Semicond. Res. 5, U130-U135, Suppl. 1 (2000).
4. M. L. Caldwell, H. H. Richardson, and M. E. Kordesch, "Optical properties of manganese doped amorphous and crystalline aluminum nitride films, " MRS Internet J. Nitride Semicond. Res. 5, U142-U147, Suppl. 1 (2000).
5. W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch, and I. Brown, "Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering, " Appl. Phys. Lett. 76, 3376-3378 (2000).
6. 3+ thin-film phosphor, " Appl. Phys. Lett. 77, 478-479 (2000).
7. V. Dimitrova, P. G. Van Patten, H. H. Richardson, and M. E. Kordesch, "Photo-, cathodo- and electroluminescence studies of sputter deposited AlN:Er thin films, " Appl. Surf. Sci. 175-176, 481-483 (2001).
8. M. L. Caldwell, A. L. Martin, C. M. Spalding, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, "Visible emission from amorphous AlN thinfilm phosphors with Cu, Mn, or Cr, " J. Vac. Sci. Technol. A 19, 1894-97 (2001).
9. 3+ thin-film phosphor, " Appl. Phys. Lett. 78, 1246-1248 (2001).
10. M. L. Caldwell, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, "Visible luminescent activation of amorphous ALN:Eu thin-film phosphors with oxygen, " MRS Internet J. Nitride Semicond. Res. 6, 1-5 (2001).
11. 3+ phosphor, " Appl. Phys. Lett. 80, 2207-2209 (2002).
12. 1-xN: Experiment and ab initio calculations, " Appl. Phys. Lett. 77, 1117-1119 (2000).
13. 1-xN, " Appl. Phys. Lett. 78, 2891-2892 (2001).
14. M. Maqbool, H. H. Richardson, and M. E. Kordesch, "Luminescence from praseodymium doped AlN thin films deposited by RF magnetron sputtering and the effect of material structure and thermal annealing on the luminescence, " J. Mater. Sci. 42, 5657-5660 (2007).
15. 5) in GaN, " J. Appl. Phys. 91, 2929-2935 (2002).
16. W. M. Jadwisienczak, H. J. Lozykowski, and I. G. Brown, "Cathodoluminescence study of GaN doped with Tb, " Mater. Sci. Eng., B 81, 140-143 (2001).
17. 3+-doped AlN, " Appl. Phys. Lett. 83, 2145-2147 (2003).
18. M. Maqbool, M. E. Kordesch, and I. Ahmad, "Electron penetration depth in amorphous AlN exploiting the luminescence of AlN: Tm/AlN: Ho bilayers, " Curr. Appl. Phys. 9, 417-421 (2009).
19. H. J. Lozykowski, W. M. Jadwisienczak, and I. Brown, " Cathodoluminescence of GaN doped with Sm and Ho, " Solid State Commun. 110, 253-258 (1999).
20. 4, " J. Appl. Phys. 83, 2772-2787 (1998).
21. M. Maqbool, "Luminescence from thulium and samarium doped amorphous AlN thin films deposited by RF magnetron sputtering and the effect of thermal activation on luminescence, " Eur. Phys. J.: Appl. Phys. 34, 31-34 (2006).