The fabrication scheme of a high resolution and high aspect ratio UV-nanoimprint mold

Nanotechnology

Volumn 20, Issue 49, 2009, Pages

  Lim, Kipil ^a   Wi, Jung Sub ^a   Nam, Sung Wook ^a   Park, Soo Yeon ^b   Lee, Jae Jong ^b,c   Kim, Ki Bum ^a  

^a Seoul National University   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

^c Korea Institute of Machine and Materials   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOT PATTERNS; ELECTRON BEAM RESIST; ETCH SELECTIVITY; FEATURE SIZES; HIGH ASPECT RATIO; HIGH RESOLUTION; HIGH-RESOLUTION PATTERNING; HYDROGEN SILSESQUIOXANE; LINE PATTERN; MOLD PATTERN; SI LAYER; UV-NANOIMPRINT; UV-NANOIMPRINT LITHOGRAPHY;

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; MOLDS; NANOIMPRINT LITHOGRAPHY; PHOTORESISTS; PRESSURE DROP;

ASPECT RATIO;

HYDROGEN SILSESQUIOXANE; INORGANIC COMPOUND; SILICON; UNCLASSIFIED DRUG;

ARTICLE; CONDUCTANCE; ELECTRON BEAM; ELECTRON TRANSPORT; MASS SPECTROMETRY; NANOFABRICATION; NANOTECHNOLOGY; PARTICLE SIZE; PATTERN STIMULATION; PRIORITY JOURNAL; ULTRAVIOLET RADIATION; UV NANOIMPRINT LITHOGRAPHY;

EID: 70449776163     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/49/495303     Document Type: Article

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