Patterning of 25-nm-wide silicon webs with an aspect ratio of 13

Microelectronic Engineering

Volumn 67-68, Issue , 2003, Pages 376-380

  Trellenkamp, St ^a   Moers, J ^a   Van der Hart, A ^a   Kordos P ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Electron beam lithography; Hydrogen silsesquioxane; Nanopatterning; Reactive ion etching

Indexed keywords

ASPECT RATIO; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); HYDROGEN INORGANIC COMPOUNDS; INDUCTIVELY COUPLED PLASMA; REACTIVE ION ETCHING; SILICON WAFERS;

ELECTRON BEAM RESISTS;

MOSFET DEVICES;

EID: 0037683076     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00187-4     Document Type: Conference Paper

References (12)

1. ITRS roadmap 2001: Emerging Research Devices, pp. 31-32, http://public.itrs.net/Files/2001ITRS/PIDS.pdf.
2. H.-S. P. Wong, K. K. Chen, Y. Taur, International Electron Device Meeting 1997, IEDM Technical Digest, pp. 427-430.
3. J.-H. Lee, G. Taraschi, A. Wie, T.A. Langdo, E.A. Fitzgerald, D.A. Antoniadis, International Electron Device Meeting 1999, IEDFM Technical Digest, pp. 71-74.
4. Schulz T., Rösner W., Landgraf E., Risch L., Langmann U. Solid-State Electron. 46:2002;985-989.
5. Hisamoto D., Lee W.-C., Kedzierski F.J., Takeuchi H., Asano K., Kuo C., et al. IEEE Trans. Electron. Dev. 47:2000;2320-2325.
6. Choi Y.-K., King T.-J., Hu C. IEEE Electron Dev. Lett. 23:2002;25-27.
7. Moers J., Trellenkamp St., Goryll M., Marso M., van der Hart A., Hogg S., et al. Microelectron. Eng. 64:2002;465-471.
8. Namatsu H., Takahashi Y., Yamazaki K., Yamaguchi T., Nagase M., Kurihara K. J. Vac. Sci. Technol. B. 16:1998;69-76.
9. van Delft F.C.M.J.M., Weterings J.P., van Langen-Suurling A.K., Romijn H. J. Vac. Sci. Technol. B. 18:2000;3419-3423.
10. Mollard L., Cunge G., Tedesco S., Dal'zotto B., Foucher J. Microelektron. Eng. 61-62:2002;755-761.
11. Jedrasik P., Hanson M. Microelektron. Eng. 61-62:2002;811-817.
12. Maile B.E., Henschel W., Kurz H., Rienks B. Jpn. J. Appl. Phys. 39:2000;6836-6842.